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SP001551996 - Infineon Technologies AG

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Part Image ZXMN6A08GTC Diodes Incorporated

Power Field-Effect Transistor, 3.8A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRLL2705 Infineon Technologies AG

Power Field-Effect Transistor, 3.8A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRFL4105TR Infineon Technologies AG

Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRFL4105HR International Rectifier

Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRFL4105PBF Infineon Technologies AG

Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

For a full list of alternate parts for SP001551996, check out Findchips.com