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STD4N62K3 - STMicroelectronics

Description: STD4N62K3 N-Channel MOSFET Transistor, 3.8 A, 620 V MDmesh K3, SuperMESH3, 3-Pin DPAK STMicroelectronics

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STD4N62K3 - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252) type-A2
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STD4N62K3 Details

  • Manufacturer Part Number:

    STD4N62K3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    620 V

  • Drain Current-Max (ID):

    3.8 A

  • Drain-source On Resistance-Max:

    1.95 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    70 W

  • Pulsed Drain Current-Max (IDM):

    15.2 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD4N62K3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STD4N62K3 can withstand is 150°C.
  • To ensure the STD4N62K3 is properly biased, make sure to provide a stable voltage supply, and ensure the gate-source voltage (Vgs) is within the recommended range of 2-4V.
  • To minimize parasitic inductance, use a compact PCB layout with short leads, and place the device close to the power source. Use a ground plane to reduce inductance and ensure good thermal dissipation.
  • To protect the STD4N62K3 from ESD, use ESD-sensitive handling procedures, and ensure the device is stored in an anti-static package. Use ESD protection devices, such as TVS diodes, in the circuit design.
  • The recommended gate resistor value for the STD4N62K3 is typically in the range of 1-10 ohms, depending on the specific application and switching frequency.

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STD4N62K3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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