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V35PWM10-M3/I - Vishay

Description: Schottky Diodes & Rectifiers Single Die TO-252AE 35A If(AV)

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V35PWM10-M3/I - Vishay PCB footprint - Other - Other - SlimDPAK (TO-252AE)_2024-1
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V35PWM10-M3/I Details

  • Manufacturer Part Number:

    V35PWM10-M3/I

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    5 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.38

  • Additional Feature:

    FREE WHEELING DIODE, LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.9 V

  • JEDEC-95 Code:

    TO-252AE

  • JESD-30 Code:

    R-PSSO-G2

  • Non-rep Pk Forward Current-Max:

    260 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    35 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    800 µA

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

V35PWM10-M3/I Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the device, using a minimum of 2 oz copper thickness, and ensuring good thermal conduction to the surrounding copper area. A thermal via array can also be used to improve heat dissipation.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves, ensure good thermal management, and consider using a heat sink or thermal interface material. Additionally, the device should be operated within the specified maximum junction temperature (Tj) of 150°C.
  • The maximum allowable voltage stress on the V35PWM10-M3/I is 10% above the maximum rated voltage (Vdrm) of 1000V. However, it's recommended to operate the device within the specified voltage rating to ensure reliable operation and minimize the risk of failure.
  • To protect the device from EOS and ESD, it's essential to follow proper handling and storage procedures, use ESD-safe materials and equipment, and implement EOS protection circuits in the design. Additionally, the device should be operated within the specified maximum ratings and derating curves.
  • The recommended storage and handling procedure for the V35PWM10-M3/I involves storing the devices in their original packaging, away from direct sunlight and moisture. The devices should be handled with ESD-safe materials and equipment, and should not be exposed to mechanical stress or vibration.

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V35PWM10-M3/I Overview

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Part Image V35PWM10HM3/I Vishay Intertechnologies

Rectifier Diode, Schottky, 1 Phase, 1 Element, 35A, 100V V(RRM), Silicon, TO-252AE