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WHBR50FET - Ohmite

Description: Ohmite WH Series ceramic Axial Wirewound Resistor 0.5Ω 1% 1W ±90ppm/°C

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WHBR50FET Details

  • Manufacturer Part Number:

    WHBR50FET

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    AXIAL LEADED

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8533.21.00.80

  • Manufacturer:

    Ohmite Mfg Co

  • YTEOL:

    10

  • Additional Feature:

    PRECISION

  • Construction:

    Tubular

  • JESD-609 Code:

    e3

  • Lead Diameter:

    0.6 mm

  • Lead Length:

    25 mm

  • Mounting Feature:

    THROUGH HOLE MOUNT

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Diameter:

    3.3 mm

  • Package Length:

    7 mm

  • Package Shape:

    TUBULAR PACKAGE

  • Package Style:

    Axial

  • Packing Method:

    TR, 11.41 INCH

  • Rated Power Dissipation (P):

    1 W

  • Rated Temperature:

    70 °C

  • Resistance:

    0.5 Ω

  • Resistor Type:

    FIXED RESISTOR

  • Surface Mount:

    NO

  • Technology:

    WIRE WOUND

  • Temperature Coefficient:

    90 ppm/°C

  • Terminal Finish:

    Tin (Sn)

  • Terminal Shape:

    WIRE

  • Tolerance:

    1%

  • Working Voltage:

    0.7071 V

WHBR50FET Frequently Asked Questions (FAQs)

  • The thermal resistance of the WHBR50FET is typically around 1.5°C/W, but this can vary depending on the specific application and mounting method. It's recommended to consult with Ohmite's application engineers for more detailed information.
  • While the WHBR50FET is primarily designed for DC and low-frequency applications, it can be used in high-frequency applications up to several hundred kHz. However, the device's performance may degrade at higher frequencies due to parasitic inductance and capacitance. It's recommended to consult with Ohmite's application engineers to determine the suitability of the WHBR50FET for specific high-frequency applications.
  • The recommended mounting method for the WHBR50FET is to use a thermally conductive interface material (such as thermal grease or thermal tape) between the device and a heat sink or metal plate. This helps to minimize thermal resistance and ensure optimal heat dissipation. Ohmite provides detailed mounting instructions and recommendations in their application notes.
  • The WHBR50FET is rated for operation up to 150°C, making it suitable for many high-temperature applications. However, the device's performance and reliability may degrade at extreme temperatures. It's recommended to consult with Ohmite's application engineers to determine the suitability of the WHBR50FET for specific high-temperature applications.
  • The WHBR50FET is designed to handle high currents and power dissipation, but its maximum power rating depends on the specific application and operating conditions. It's recommended to consult with Ohmite's application engineers to determine the suitability of the WHBR50FET for specific high-power applications and to ensure that the device is operated within its safe operating area.

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WHBR50FET Overview

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