2SC1213A - Renesas Electronics
Description: Silicon NPN Epitaxial collector-base (35-50V), collector-emitter (35-50V), or emitter-base (4V) ,collector current (500mA) ,power dissipation (400mW),storage temperatures (-55 to +150°C)
Description: Silicon NPN Epitaxial collector-base (35-50V), collector-emitter (35-50V), or emitter-base (4V) ,collector current (500mA) ,power dissipation (400mW),storage temperatures (-55 to +150°C)
