AFT09MS031GN - NXP

Description: N-channel LDMOS RF power transistor for 764–941 MHz, delivering up to 44 W CW output, 18 dB gain, 74% efficiency, and 31 W P1dB, with a 13.6 V supply, 500 mA bias, and 0.63 °C/W thermal resistance, housed in a TO-270-2 plastic package, ESD-protected to HBM 2kV, and rated up to 225 °C junction temperature, ideal for mobile radio and trunking base stations.