APS25608N-OBR-BD - apmemory

Description: Low Power Features: o Partial Array Self-Refresh (PASR) o Auto Temperature Compensated SelfRefresh (ATCSR) self-managed by a built-in temperature sensor o Ultra Low Power Half Sleep mode with data retention. Software reset Reset pin available Output driver LVCMOS with programmable drive strength Data mask (DM) for write operation Data strobe (DQS) for high speed read operation Write burst length, maximum 2048 Byte, minimum 2 Byte. Wrap & hybrid burst in 16/32/64/2K lengths. Linear Burst Comm