FCD380N60E - onsemi
Description: 650 V at TJ = 150°C; Low Effective Output Capacitance ( Typ. Coss.eff = 97 pF ); Ultra-Low Gate Charge ( Typ. Qg = 34 nC ); 100% Avalanche Tested; Max. RDS(on) = 380 mΩ
Description: 650 V at TJ = 150°C; Low Effective Output Capacitance ( Typ. Coss.eff = 97 pF ); Ultra-Low Gate Charge ( Typ. Qg = 34 nC ); 100% Avalanche Tested; Max. RDS(on) = 380 mΩ
