FCD600N60Z - onsemi
Description: Max. RDS(on) = 600 mΩ; 650 V at TJ = 150°C; 100% Avalanche Tested; Ultra-Low Gate Charge ( Typ. Qg = 20nC ); Low Effective Output Capacitance ( Typ. Coss.eff = 74 pF ); ESD Improved Capacity
Description: Max. RDS(on) = 600 mΩ; 650 V at TJ = 150°C; 100% Avalanche Tested; Ultra-Low Gate Charge ( Typ. Qg = 20nC ); Low Effective Output Capacitance ( Typ. Coss.eff = 74 pF ); ESD Improved Capacity
