FCD7N60TM - onsemi
Description: Typ. RDS(on) = 530mΩ; 650V @TJ = 150°C; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 23nC ); RoHS compliant; Low effective output capacitance ( Typ. Coss.eff = 60pF )
Description: Typ. RDS(on) = 530mΩ; 650V @TJ = 150°C; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 23nC ); RoHS compliant; Low effective output capacitance ( Typ. Coss.eff = 60pF )
