FCH023N65S3L4 - onsemi

Description: 700 V @ TJ = 150 oC; Kelvin contact; Ultra Low Gate Charge (Typ. Qg = 222 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1980 pF); Optimized Capacitance; Kelvin contact; Typ. RDS(on) = 19.5 mΩ; 100% Avalanche Tested; RoHS Compliant

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