FCMT180N65S3 - onsemi

Description: Kelvin contact; Ultra Low Gate Charge (Typ. Qg = 33 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 305 pF); Typ. RDS(on) = 152 mΩ; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.5 Ω; Moisture Sensitivity Level 1 guarantee; 700 V @ TJ = 150 oC; Leadless Ultra-thin SMD package; Optimized Capacitance