FCMT199N60 - onsemi
Description: Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF); Ultra Low Gate Charge (Typ. Qg = 57 nC); RDS(on) = 170 mΩ (Typ.); 650 V @ TJ = 150°C; RoHS Compliant; 100% Avalanche Tested
Description: Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF); Ultra Low Gate Charge (Typ. Qg = 57 nC); RDS(on) = 170 mΩ (Typ.); 650 V @ TJ = 150°C; RoHS Compliant; 100% Avalanche Tested
