FCMT299N60 - onsemi
Description: Ultra Low Gate Charge (Typ. Qg = 39 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF); RoHS Compliant; RDS(on) = 250 mΩ (Typ.); 100% Avalanche Tested; 650 V @ TJ = 150°C
Description: Ultra Low Gate Charge (Typ. Qg = 39 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF); RoHS Compliant; RDS(on) = 250 mΩ (Typ.); 100% Avalanche Tested; 650 V @ TJ = 150°C
