FCP104N60 - onsemi
Description: Ultra Low Gate Charge (Typ. Qg = 63 nC); 650 V @ TJ = 150°C; 100% Avalanche Tested; Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF); RoHS Compliant; Typ. RDS(on) = 96 mΩ
Description: Ultra Low Gate Charge (Typ. Qg = 63 nC); 650 V @ TJ = 150°C; 100% Avalanche Tested; Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF); RoHS Compliant; Typ. RDS(on) = 96 mΩ
