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FCP104N60 - onsemi

Description: Ultra Low Gate Charge (Typ. Qg = 63 nC); 650 V @ TJ = 150°C; 100% Avalanche Tested; Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF); RoHS Compliant; Typ. RDS(on) = 96 mΩ

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Symbol
FCP104N60 - onsemi - PCB symbol
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PCB Footprints
FCP104N60 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220_2022
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3D Models
FCP104N60 - onsemi - 3D model - Transistor Outline, Vertical - TO-220_2022
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FCP104N60 Details

  • Manufacturer Part Number:

    FCP104N60

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    ROHS COMPLIANT, PLASTIC PACKAGE-3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    809 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    37 A

  • Drain-source On Resistance-Max:

    0.104 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    357 W

  • Pulsed Drain Current-Max (IDM):

    111 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCP104N60 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCP104N60 is 150°C, but it's recommended to keep it below 125°C for reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. A thermal interface material (TIM) can also be used to improve heat transfer.
  • The recommended gate drive voltage for the FCP104N60 is between 10V and 15V, with a maximum of 20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
  • Yes, the FCP104N60 is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching losses and thermal performance should be carefully evaluated to ensure reliable operation.
  • Overvoltage protection can be achieved using a voltage clamp or a zener diode. Overcurrent protection can be achieved using a current sense resistor and a comparator or an overcurrent protection IC. A fuse or a circuit breaker can also be used to protect the device from excessive current.

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FCP104N60 Overview

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