FCP104N60F - onsemi
Description: 650 V @TJ = 150°C; 100% Avalanche Tested; Low Effective Output Capacitance (Typ. COSS.eff = 313 pF); Max. RDS(on) = 104 mΩ; Ultra Low Gate Charge (Typ. Qg = 110 nC)
Description: 650 V @TJ = 150°C; 100% Avalanche Tested; Low Effective Output Capacitance (Typ. COSS.eff = 313 pF); Max. RDS(on) = 104 mΩ; Ultra Low Gate Charge (Typ. Qg = 110 nC)
