FCP11N60F - onsemi
Description: Fast recovery type ( trr = 120ns ); 650V @TJ = 150°C; RoHS compliant; Low effective output capacitance ( Typ. Coss.eff = 95pF ); Typ. RDS(on) = 320mΩ; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 40nC )
Description: Fast recovery type ( trr = 120ns ); 650V @TJ = 150°C; RoHS compliant; Low effective output capacitance ( Typ. Coss.eff = 95pF ); Typ. RDS(on) = 320mΩ; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 40nC )
