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FCP11N60F - onsemi

Description: Fast recovery type ( trr = 120ns ); 650V @TJ = 150°C; RoHS compliant; Low effective output capacitance ( Typ. Coss.eff = 95pF ); Typ. RDS(on) = 320mΩ; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 40nC )

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FCP11N60F - onsemi - PCB symbol
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PCB Footprints
FCP11N60F - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 *variation AB
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3D Models
FCP11N60F - onsemi - 3D model - Transistor Outline, Vertical - TO-220 *variation AB
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FCP11N60F Details

  • Manufacturer Part Number:

    FCP11N60F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    ROHS COMPLIANT, TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    340 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    33 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCP11N60F Frequently Asked Questions (FAQs)

  • The maximum junction temperature that FCP11N60F can withstand is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • The thermal resistance of FCP11N60F can be calculated using the thermal resistance values provided in the datasheet. The thermal resistance from junction to case (RθJC) is 1.5°C/W, and the thermal resistance from case to ambient (RθCA) is 62°C/W. You can use these values to calculate the total thermal resistance.
  • The recommended gate resistor value for FCP11N60F is between 10Ω to 100Ω. However, the optimal value depends on the specific application and the required switching frequency. A higher gate resistor value can reduce the switching speed, while a lower value can increase the switching speed but may cause oscillations.
  • Yes, FCP11N60F is suitable for high-frequency switching applications up to 100 kHz. However, you need to ensure that the device is properly cooled and the switching frequency is within the recommended range to avoid overheating and reduce the risk of failure.
  • To protect FCP11N60F from overvoltage and overcurrent, you can use a voltage regulator or a voltage clamp to limit the voltage across the device. Additionally, you can use a current sense resistor and a comparator to detect overcurrent conditions and shut down the device if necessary.

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FCP11N60F Overview

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FCP11N60F Alternates

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Part Image FCP11N60 Rochester Electronics LLC

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Part Image SPP11N60C3 Infineon Technologies AG

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