FCP11 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FCP11N60F onsemi	1	Fast recovery type ( trr = 120ns ); 650V @TJ = 150°C; RoHS compliant; Low effective output capacitance ( Typ. Coss.eff = 95pF ); Typ. RDS(on) = 320mΩ; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 40nC )	Transistor Outline, Vertical	FCP11N60F	3D model available Symbol and footprint available 3	1 Download Model
	FCP11N60 onsemi	1	Low effective output capacitance (typ. Coss.eff=95pF); Typ. Rds(on)=0.32Ω; Ultra low gate charge (typ. Qg=40nC); RoHS Compliant; 100% avalanche tested; 650V @Tj = 150°C	Transistor Outline, Vertical	FCP11N60	3D model available Symbol and footprint available 3	1 Download Model
	FCP11N60 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FCP11N60	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP11N60N onsemi	1	Power Field-Effect Transistor, 10.8A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FCP11N60N	3D model not available Symbol and footprint not available 0	0 Build or Request

	FCP110N65F onsemi	1	Power Field-Effect Transistor, 35A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FCP110N65F	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP11N60 Rochester Electronics LLC	1	11A, 600V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT PACKAGE-3		FCP11N60	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP11N60F Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FCP11N60F	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP11N60N-F102 onsemi	1	Power Field-Effect Transistor, 10.8A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FCP11N60N-F102	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP11N60N Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10.8A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FCP11N60N	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP110N65F Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 35A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FCP110N65F	3D model not available Symbol and footprint not available 0	0 Build or Request
	CTM5035AMFCP-112.000MHZ MtronPTI	1	Converter		CTM5035AMFCP-112.000MHZ	3D model not available Symbol and footprint not available 0	0 Build or Request
	LFC-P11YLR Honda Tsushin Kogyo Co Ltd	1	FFC/FPC Connector		LFC-P11YLR	3D model not available Symbol and footprint not available 0	0 Build or Request
	LFC-P11YL Honda Tsushin Kogyo Co Ltd	1	FFC/FPC Connector		LFC-P11YL	3D model not available Symbol and footprint not available 0	0 Build or Request
	CTM5035AFCP-112.000MHZ MtronPTI	1	Converter		CTM5035AFCP-112.000MHZ	3D model not available Symbol and footprint not available 0	0 Build or Request

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