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FCP11N60 - onsemi

Description: Low effective output capacitance (typ. Coss.eff=95pF); Typ. Rds(on)=0.32Ω; Ultra low gate charge (typ. Qg=40nC); RoHS Compliant; 100% avalanche tested; 650V @Tj = 150°C

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FCP11N60 - onsemi - PCB symbol
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PCB Footprints
FCP11N60 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_2024
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3D Models
FCP11N60 - onsemi - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_2024
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FCP11N60 Details

  • Manufacturer Part Number:

    FCP11N60

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    340 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    33 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCP11N60 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that FCP11N60 can withstand is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • The thermal resistance of FCP11N60 can be calculated using the thermal resistance values provided in the datasheet. The thermal resistance from junction to case (RθJC) is 1.5°C/W, and the thermal resistance from case to ambient (RθCA) is dependent on the specific heat sink and cooling system used.
  • The recommended gate drive voltage for FCP11N60 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • Yes, FCP11N60 is suitable for high-frequency switching applications up to 100 kHz. However, the maximum switching frequency may be limited by the specific application and the device's thermal performance.
  • To ensure the reliability of FCP11N60 in a high-reliability application, it's recommended to follow proper design and manufacturing guidelines, including derating the device's voltage and current ratings, using a suitable heat sink, and ensuring proper thermal management.

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FCP11N60 Overview

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FCP11N60 Alternates

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Part Image FCP11N60 Rochester Electronics LLC

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Part Image SPP11N60C3 Infineon Technologies AG

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