FCP16N60 - onsemi
Description: Low effective output capacitance (typ. Coss.eff=110pF) ; 100% avalanche tested; Ultra low gate charge (typ. Qg=55nC) ; Typ. Rds(on) = 0.22O ; 650V @TJ = 150°C
Description: Low effective output capacitance (typ. Coss.eff=110pF) ; 100% avalanche tested; Ultra low gate charge (typ. Qg=55nC) ; Typ. Rds(on) = 0.22O ; 650V @TJ = 150°C
