FCP190N65S3 - onsemi

Description: 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 33 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF); Optimized Capacitance; Internal Gate resistance: 7.0 ohm; Typ. RDS(on) = 159 mΩ; 100% Avalanche Tested; RoHS Compliant

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