FCP22N60N - onsemi
Description: RoHS compliant; BVDSS = 650V @ TJ = 150°C; RDS(on) = 140mΩ ( Typ.) @ VGS = 10V, ID = 11A; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 45nC ); Low effective output capacitance ( Typ. Coss.eff = 196.4pF )
Description: RoHS compliant; BVDSS = 650V @ TJ = 150°C; RDS(on) = 140mΩ ( Typ.) @ VGS = 10V, ID = 11A; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 45nC ); Low effective output capacitance ( Typ. Coss.eff = 196.4pF )
