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FCP22N60N - onsemi

Description: RoHS compliant; BVDSS = 650V @ TJ = 150°C; RDS(on) = 140mΩ ( Typ.) @ VGS = 10V, ID = 11A; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 45nC ); Low effective output capacitance ( Typ. Coss.eff = 196.4pF )

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PCB Footprints
FCP22N60N - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220, Molded, 3-Lead, Jedec Variation AB
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3D Models
FCP22N60N - onsemi  - 3D model - Transistor Outline, Vertical - TO-220, Molded, 3-Lead, Jedec Variation AB
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FCP22N60N Details

  • Manufacturer Part Number:

    FCP22N60N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    41 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    672 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.165 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    205 W

  • Pulsed Drain Current-Max (IDM):

    66 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCP22N60N Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCP22N60N is 150°C, but it's recommended to keep it below 125°C for reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 1°C/W or lower, and ensuring good thermal contact between the device and the heat sink.
  • The recommended gate drive voltage for the FCP22N60N is between 10V and 15V, with a maximum of 20V.
  • Yes, the FCP22N60N is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the device is properly cooled and the switching losses are minimized.
  • The FCP22N60N can be protected from overvoltage and overcurrent by using a voltage clamp circuit and a current sense resistor, respectively.

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FCP22N60N Overview

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Part Image FCP22N60N-F102 onsemi

Power Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB