FCP260N60E - onsemi
Description: Maximum RDS(on) = 260 mΩ; 650 V at TJ = 150°C; Ultra Low Gate Charge ( Typ. Qg = 48 nC ); Low Effective Output Capacitance ( Typ. Coss.eff = 129 pF ); 100% Avalanche Tested
Description: Maximum RDS(on) = 260 mΩ; 650 V at TJ = 150°C; Ultra Low Gate Charge ( Typ. Qg = 48 nC ); Low Effective Output Capacitance ( Typ. Coss.eff = 129 pF ); 100% Avalanche Tested
