FCPF380N60E - onsemi
Description: 650V @TJ = 150°C; 100% avalanche tested; Max. RDS(on) = 380mΩ; Ultra low gate charge ( Typ. Qg = 34nC ); Low effective output capacitance ( Typ. Coss.eff = 97pF )
Description: 650V @TJ = 150°C; 100% avalanche tested; Max. RDS(on) = 380mΩ; Ultra low gate charge ( Typ. Qg = 34nC ); Low effective output capacitance ( Typ. Coss.eff = 97pF )
