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FCPF380N60E - onsemi

Description: 650V @TJ = 150°C; 100% avalanche tested; Max. RDS(on) = 380mΩ; Ultra low gate charge ( Typ. Qg = 34nC ); Low effective output capacitance ( Typ. Coss.eff = 97pF )

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FCPF380N60E - onsemi - PCB symbol
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PCB Footprints
FCPF380N60E - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPACK CASE 221AT ISSUE A
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3D Models
FCPF380N60E - onsemi - 3D model - Transistor Outline, Vertical - TO-220 FULLPACK CASE 221AT ISSUE A
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FCPF380N60E Details

  • Manufacturer Part Number:

    FCPF380N60E

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    10.2 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    31 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

FCPF380N60E Frequently Asked Questions (FAQs)

  • The recommended gate resistor value for FCPF380N60E is typically in the range of 10-20 ohms, but it may vary depending on the specific application and switching frequency.
  • To ensure proper cooling, make sure to attach a heat sink with a thermal resistance of less than 1°C/W, and apply a thin layer of thermal interface material. Also, ensure good airflow around the device.
  • The maximum allowed voltage imbalance between the drain and source pins is ±10V. Exceeding this limit may cause damage to the device.
  • Yes, FCPF380N60E is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the gate drive circuit is optimized for high-frequency operation, and the device is properly cooled.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage. For overcurrent protection, use a current sense resistor and a comparator to detect overcurrent conditions, and implement a shutdown mechanism to prevent damage.

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FCPF380N60E Overview

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FCPF380N60E Alternates

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Part Image FCPF380N60E-F154 onsemi

Power Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image FCPF380N60E-F152 onsemi

Power Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image FCPF380N60E_F152 onsemi

Power Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB