FCPF380N60E-F154 - onsemi

Description: Low effective output capacitance ( Typ. Coss.eff = 97pF ); Ultra low gate charge ( Typ. Qg = 34nC ); 650V @TJ = 150°C; Max. RDS(on) = 380mΩ; 100% avalanche tested

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Image	Part Number	Model
	FCPF380N60E-F152 onsemi Power Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	FCPF380N60E_F152 onsemi Power Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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FCPF380N60E-F154 - onsemi

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