FDA24N50F - onsemi
Description: Low gate charge ( Typ. 65nC); Improved dv/dt capability; Low Crss ( Typ. 32pF); RDS(on) = 166mΩ ( Typ.)@ VGS = 10V, ID = 12A; RoHS compliant; 100% avalanche tested
Description: Low gate charge ( Typ. 65nC); Improved dv/dt capability; Low Crss ( Typ. 32pF); RDS(on) = 166mΩ ( Typ.)@ VGS = 10V, ID = 12A; RoHS compliant; 100% avalanche tested
