Please enter a minimum 3 letters or numbers
Technical Content
Part Image

FDA24N50F - onsemi

Description: Low gate charge ( Typ. 65nC); Improved dv/dt capability; Low Crss ( Typ. 32pF); RDS(on) = 166mΩ ( Typ.)@ VGS = 10V, ID = 12A; RoHS compliant; 100% avalanche tested

Download FDA24N50F Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
FDA24N50F - onsemi - PCB symbol
click to zoom
PCB Footprints
FDA24N50F - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED-ren1
click to zoom
3D Models
FDA24N50F - onsemi - 3D model - Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED-ren1
click to zoom

FDA24N50F Details

  • Manufacturer Part Number:

    FDA24N50F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    7 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.15

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    24 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    270 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

FDA24N50F Frequently Asked Questions (FAQs)

  • The FDA24N50F can operate from -40°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C.
  • To ensure proper biasing, the gate-source voltage (VGS) should be between 2V and 10V, and the drain-source voltage (VDS) should be between 10V and 500V.
  • The recommended gate resistor value is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, the FDA24N50F is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure proper PCB layout, decoupling, and thermal management to minimize losses and ensure reliability.
  • To protect the FDA24N50F, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDA24N50F Overview

Use the download button to access the FDA24N50F schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDA24, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDA24N50F

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑