FDA59N25 - onsemi
Description: Low gate charge ( Typ. 63nC); RDS(on) = 49mΩ ( Max.)@ VGS = 10V, ID = 29.5A; Low Crss ( Typ. 70pF); 100% avalanche tested
Description: Low gate charge ( Typ. 63nC); RDS(on) = 49mΩ ( Max.)@ VGS = 10V, ID = 29.5A; Low Crss ( Typ. 70pF); 100% avalanche tested
