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FDA59N25 - onsemi

Description: Low gate charge ( Typ. 63nC); RDS(on) = 49mΩ ( Max.)@ VGS = 10V, ID = 29.5A; Low Crss ( Typ. 70pF); 100% avalanche tested

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PCB Footprints
FDA59N25 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O-1
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3D Models
FDA59N25 - onsemi  - 3D model - Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O-1
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FDA59N25
  • Part Number FDA59N25
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (N-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O-1
  • Released Date Feb 4, 2024
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FDA59N25 Details

  • Manufacturer Part Number:

    FDA59N25

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3P, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.92

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    1458 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    59 A

  • Drain-source On Resistance-Max:

    0.049 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    392 W

  • Pulsed Drain Current-Max (IDM):

    236 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDA59N25 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDA59N25 is -40°C to 150°C.
  • To ensure proper biasing, the FDA59N25 requires a minimum of 10mA of quiescent current (IQ) and a supply voltage (VCC) between 3.0V and 5.5V.
  • To minimize EMI, it is recommended to use a multi-layer PCB with a solid ground plane, keep the input and output traces short and away from each other, and use a common-mode choke or ferrite bead on the input lines.
  • Yes, the FDA59N25 can be used in a switching regulator application, but it requires additional external components and careful design consideration to ensure stability and minimize ringing.
  • To protect the FDA59N25 from overvoltage and overcurrent conditions, it is recommended to use a voltage regulator with overvoltage protection (OVP) and overcurrent protection (OCP) features, as well as a fuse or PTC resettable fuse.

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FDA59N25 Overview

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