FDA59N30 - onsemi
Description: Low Crss ( Typ. 80pF); Low gate charge ( Typ. 77nC); 100% avalanche tested; RDS(on) = 56mΩ ( Max.)@ VGS = 10V, ID = 29.5A
Description: Low Crss ( Typ. 80pF); Low gate charge ( Typ. 77nC); 100% avalanche tested; RDS(on) = 56mΩ ( Max.)@ VGS = 10V, ID = 29.5A
