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FDA59N30 - onsemi

Description: Low Crss ( Typ. 80pF); Low gate charge ( Typ. 77nC); 100% avalanche tested; RDS(on) = 56mΩ ( Max.)@ VGS = 10V, ID = 29.5A

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Symbol
FDA59N30 - onsemi - PCB symbol
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PCB Footprints
FDA59N30 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3PN_2
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3D Models
FDA59N30 - onsemi - 3D model - Transistor Outline, Vertical - TO-3PN_2
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FDA59N30 Details

  • Manufacturer Part Number:

    FDA59N30

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    52 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.18

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    1734 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    59 A

  • Drain-source On Resistance-Max:

    0.056 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    500 W

  • Pulsed Drain Current-Max (IDM):

    236 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDA59N30 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDA59N30 is -55°C to 150°C.
  • To ensure proper biasing, the FDA59N30 requires a Vcc of 5V ± 10% and a Vee of -5V ± 10%. Additionally, the input voltage should be within the recommended operating range of 0.5V to 4.5V.
  • For optimal thermal management, it is recommended to use a multi-layer PCB with a solid ground plane and to place the FDA59N30 near a heat sink or thermal pad. Additionally, ensure that the PCB layout minimizes thermal resistance and provides adequate clearance around the device.
  • To prevent ESD damage, it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays on the input and output pins of the FDA59N30. Additionally, ensure that the PCB design includes ESD protection features such as guard rings and ESD protection zones.
  • For optimal assembly and soldering, it is recommended to follow the onsemi recommended soldering profile and to use a soldering iron with a temperature range of 220°C to 240°C. Additionally, ensure that the PCB is cleaned and dried before assembly to prevent moisture damage.

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FDA59N30 Overview

Use the download button to access the FDA59N30 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDA59, or try a keyword search, such as Power Field-Effect Transistors

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FDA59N30 Alternates

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Part Image FDA59N30 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 59A I(D), 300V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET