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FQT2P25TF
onsemi
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1 | -0.55 A, -250 V, RDS(on) = 4.0 Ω (Max.) @ VGS = -10 V, ID = -0.275 A; Low Crss (Typ. 6.5 pF); 100% Avalanche Tested; Low Gate Charge (Typ. 6.5 nC) | SOT223 (3-Pin) | FQT2P25TF |
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FQT2P25TF
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 0.55A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FQT2P25TF |
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