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FQT2P25TF - onsemi

Description: -0.55 A, -250 V, RDS(on) = 4.0 Ω (Max.) @ VGS = -10 V, ID = -0.275 A; Low Crss (Typ. 6.5 pF); 100% Avalanche Tested; Low Gate Charge (Typ. 6.5 nC)

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PCB Footprints
FQT2P25TF - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - FQT2P25TF
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3D Models
FQT2P25TF - onsemi  - 3D model - SOT223 (3-Pin) - FQT2P25TF
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FQT2P25TF Details

  • Manufacturer Part Number:

    FQT2P25TF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    38 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    0.55 A

  • Drain-source On Resistance-Max:

    4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    250

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    2.2 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQT2P25TF Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern are suggested. Refer to onsemi's application note AND9093/D for more details.
  • The FQT2P25TF requires a bias voltage of 2.5V ± 10% on the VCC pin. Ensure the bias voltage is stable and noise-free to prevent performance degradation.
  • The maximum power dissipation for the FQT2P25TF is 1.4W. Ensure the device is properly heat-sinked and the ambient temperature is within the recommended operating range to prevent overheating.
  • Yes, the FQT2P25TF is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, ensure you follow the recommended operating conditions and design guidelines to ensure reliability.
  • The FQT2P25TF has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing to prevent damage.

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FQT2P25TF Overview

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