FDA59N30 Model Download Search Results
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FDA59N30
onsemi
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1 | Low Crss ( Typ. 80pF); Low gate charge ( Typ. 77nC); 100% avalanche tested; RDS(on) = 56mΩ ( Max.)@ VGS = 10V, ID = 29.5A | Transistor Outline, Vertical | FDA59N30 |
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FDA59N30
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 59A I(D), 300V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDA59N30 |
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FDA59N30_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 59A I(D), 300V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDA59N30_NL |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to3p_3.jpg"])
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