FDB0190N807L - onsemi

Description: Max rDS(on) = 2 mΩ at VGS = 8 V, ID = 31 A ; High Performance Trench Technology for Extremely LowRDS(on) ; Max rDS(on) = 1.7 mΩ at VGS = 10 V, ID = 34 A ; Low Gate Charge ; High Power and Current Handling Capability ; RoHS Compliant ; Fast Switching Speed