FDB031N08 - onsemi
Description: High performance trench technology for extremely low RDS(on) ; Fast switching speed; High power and current handling capability; RoHS compliant; Low Gate Charge; RDS(on) = 2.4mΩ ( Typ.) @ VGS = 10V, ID = 75A
Description: High performance trench technology for extremely low RDS(on) ; Fast switching speed; High power and current handling capability; RoHS compliant; Low Gate Charge; RDS(on) = 2.4mΩ ( Typ.) @ VGS = 10V, ID = 75A
