FDB082N15A - onsemi

Description: RDS(on) = 6.7mΩ ( Typ.)@ VGS = 10V, ID = 75A; High Performance Trench Technology for Extremely Low RDS(on); Low Gate Charge, QG = 64.5nC ( Typ.); Fast Switching Speed; RoHS Compliant; High Power and Current Handling Capability

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