FDC2612 - onsemi
Description: RDS(on) = 725 mΩ@ VGS = 10 V ; Fast switching speed ; Low gate charge (8nC typical) ; High performance trench technology for extremely low RDS(ON) ; 1.1 A, 200V ; High power and current handling capability
Description: RDS(on) = 725 mΩ@ VGS = 10 V ; Fast switching speed ; Low gate charge (8nC typical) ; High performance trench technology for extremely low RDS(ON) ; 1.1 A, 200V ; High power and current handling capability
