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FDC2612 - onsemi

Description: RDS(on) = 725 mΩ@ VGS = 10 V ; Fast switching speed ; Low gate charge (8nC typical) ; High performance trench technology for extremely low RDS(ON) ; 1.1 A, 200V ; High power and current handling capability

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FDC2612 - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOT23 6−Lea
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FDC2612 - onsemi  - 3D model - SOT23 (6-Pin) - TSOT23 6−Lea
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FDC2612 Details

  • Manufacturer Part Number:

    FDC2612

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SUPERSOT-6

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.8

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    1.1 A

  • Drain-source On Resistance-Max:

    0.725 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.8 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC2612 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDC2612 involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded cable and minimizing the loop area of the input and output traces can help reduce EMI.
  • To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the GND pin to a solid ground plane. The EN pin should be tied to VCC or a digital signal to enable the device. The input pins (VIN and VSENSE) should be connected to the power source and sense resistor, respectively.
  • The maximum current rating for the FDC2612 is 1A. To calculate power dissipation, use the formula: Pd = (VIN - VOUT) x IOUT, where Pd is the power dissipation, VIN is the input voltage, VOUT is the output voltage, and IOUT is the output current.
  • The sense resistor value depends on the desired current limit and the input voltage. A higher sense resistor value will result in a lower current limit. Use the formula: RSENSE = (VIN - VOUT) / IOUT, where RSENSE is the sense resistor value, VIN is the input voltage, VOUT is the output voltage, and IOUT is the desired current limit.
  • The EN (enable) pin is used to turn the device on or off. When EN is high, the device is enabled, and when EN is low, the device is disabled. This pin can be used to implement power sequencing or to turn off the device when not in use.

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FDC2612 Overview

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Part Image FDC2612 Rochester Electronics LLC

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Part Image FDC2612 Fairchild Semiconductor Corporation

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Part Image FDC2612_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 1.1A I(D), 200V, 0.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET