FDC3601N - onsemi

Description: 1.0 A, 100 V ; RDS(on) = 550 mΩ @ VGS = 6 V ; Fast switching speed ; SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8); low profile (1mm thick) ; RDS(on) = 500 mΩ@ VGS = 10 V ; High performance trench technology for extremely low RDS(ON) ; Low gate charge (3.7nC typical)