FDC3612 - onsemi

Description: High performance trench technology for extremely low RDS(ON) ; High power and current handling capability ; RDS(on) = 135 mΩ @ VGS = 6 V ; RDS(on) = 125 mΩ@ VGS = 10 V ; Low gate charge (14nC typical) ; Fast switching speed ; 2.6 A, 100 V