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FDC3612 - onsemi

Description: High performance trench technology for extremely low RDS(ON) ; High power and current handling capability ; RDS(on) = 135 mΩ @ VGS = 6 V ; RDS(on) = 125 mΩ@ VGS = 10 V ; Low gate charge (14nC typical) ; Fast switching speed ; 2.6 A, 100 V

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PCB Footprints
FDC3612 - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOT23 6−Lea
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3D Models
FDC3612 - onsemi  - 3D model - SOT23 (6-Pin) - TSOT23 6−Lea
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FDC3612 Details

  • Manufacturer Part Number:

    FDC3612

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SUPERSOT-6

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    2.6 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.8 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC3612 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDC3612 involves keeping the high-frequency traces short and away from the edges of the board, using a solid ground plane, and placing the decoupling capacitors close to the device. Additionally, it's recommended to use a shielded cable for the USB connection to reduce EMI.
  • To optimize the FDC3612 for low power consumption, ensure that the device is in the lowest power mode possible for the application, use a low-power oscillator, and minimize the number of active circuits. Additionally, consider using a low-power mode for the USB interface and optimizing the firmware to reduce power consumption.
  • The FDC3612 has a maximum junction temperature of 150°C. To ensure reliable operation, it's essential to provide adequate heat sinking, especially in high-temperature environments. A thermal pad on the bottom of the package helps to dissipate heat, and a thermal interface material can be used to improve heat transfer.
  • To troubleshoot issues with the FDC3612, start by verifying the power supply and clock signals. Check the device's configuration and register settings, and ensure that the firmware is correct. Use a logic analyzer or oscilloscope to debug the signals, and consult the datasheet and application notes for guidance.
  • The FDC3612 has built-in ESD protection, but it's still essential to follow proper ESD handling procedures during manufacturing and assembly. Use ESD-protective packaging and handling materials, and ensure that the device is properly grounded during assembly.

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FDC3612 Overview

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Part Image FDC3612 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.6A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET