FDC610PZ - onsemi

Description: Max rDS(on) = 75mΩ at VGS = -4.5V, ID = -3.7A; Low gate charge (17nC typical).; High performance trench technology for extremely low rDS(on). ; SuperSOT™-6 package: small footprint (72% smaller than standard SO-8) low profile (1mm thick).; Max rDS(on) = 42mΩ at VGS = -10V, ID = -4.9A; RoHS compliant