FDC6305N - onsemi

Description: RDS(on) = 0.12Ω @ VGS = 2.5V ; Fast switching speed ; SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick) ; High performance trench technology for extremelylow RDS(ON) ; RDS(on) = 0.08Ω @ VGS = 4.5V ; Low gate charge (3.5nC typical) ; 2.7 A, 20 V