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FDC6305N - onsemi

Description: RDS(on) = 0.12Ω @ VGS = 2.5V ; Fast switching speed ; SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick) ; High performance trench technology for extremelylow RDS(ON) ; RDS(on) = 0.08Ω @ VGS = 4.5V ; Low gate charge (3.5nC typical) ; 2.7 A, 20 V

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PCB Footprints
FDC6305N - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
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3D Models
FDC6305N - onsemi  - 3D model - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
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FDC6305N Details

  • Manufacturer Part Number:

    FDC6305N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SUPERSOT-6

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.7 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.96 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC6305N Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDC6305N involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded inductor and placing it away from the device can help reduce EMI.
  • To ensure the FDC6305N operates within its SOA, monitor the device's junction temperature, input voltage, and output current. Make sure the device is not exposed to excessive voltage, current, or temperature, and that the thermal design is adequate to keep the junction temperature below the maximum rating.
  • A low-ESR ceramic capacitor with a value of 10uF to 22uF is recommended for the input of the FDC6305N. This helps to filter out noise and ripple on the input voltage.
  • To troubleshoot issues with the FDC6305N, start by checking the input voltage, output voltage, and output current. Verify that the device is properly soldered and that the PCB layout is correct. Check for signs of overheating, such as excessive temperature or thermal shutdown. Use an oscilloscope to check for noise or oscillations on the output.
  • Yes, the FDC6305N is suitable for high-reliability and automotive applications. It meets the requirements of the AEC-Q100 standard for automotive grade devices, and its robust design and manufacturing process ensure high reliability and low defect rates.

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FDC6305N Overview

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Part Image FDC6305N Fairchild Semiconductor Corporation

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Part Image FDC6305N_NL Fairchild Semiconductor Corporation

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Part Image FDC6305ND87Z Fairchild Semiconductor Corporation

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