FDC63 Model Download Search Results
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FDC6323L
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1 | VON/OFF Zener protection for ESD ruggedness >6KV Human Body Model ; High density cell design for extremely low on-resistance ; VDROP=0.2V @ VIN=5V, IL=1A, VON/OFF= 1.5V to 8V VDROP=0.3V @ VIN=3.3V, IL=1A, VON/OFF= 1.5V to 8V ; SuperSOT™-6 package design using copper lead frame for superior thermal and electrical capabilities | SOT23 (6-Pin) | FDC6323L |
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FDC634P
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1 | High performance trench technology for extremelylow RDS(ON) ; -3.5 A, -20 V ; Low gate charge (7.2 nC typical) ; RDS(ON) = 110 mΩ @ VGS = -2.5 V ; RDS(ON) = 80 mΩ @ VGS = -4.5 V | SOT23 (6-Pin) | FDC634P |
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FDC6320C
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1 | Last Shipments - Integrated Load Switch | SOT23 (6-Pin) | FDC6320C |
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FDC6331L
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1 | RDS(ON) = 100 mΩ @ VGS = –1.8 V; RDS(ON) = 70 mΩ @ VGS = –2.5 V; –2.8 A, –8 V. ; High performance trench technology for extremelylow RDS(ON); Control MOSFET (Q1) includes Zener protection forESD ruggedness (>6KV Human body model); RDS(ON) = 55 mΩ @ VGS = –4.5 V | SOT23 (6-Pin) | FDC6331L |
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FDC6326L
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1 | SuperSOT™-6 package design using copper lead frame for superior thermal and electrical capabilities ; VDROP=0.20V @ VIN=12V, IL=1.5A. R(ON) = 0.125Ω VDROP=0.20V @ VIN=5V, IL=1A. R(ON) = 0.20Ω | SOT23 (6-Pin) | FDC6326L |
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FDC638APZ
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1 | SuperSOT™ -6 package:small footprint (72% smaller than standard SO¨C8) low profile (1mm thick). ; Manufactured using Green packaging materials. ; Max rDS(ON) = 43mΩ at VGS = -4.5V, ID = -4.5A ; Halide free ; Low gate charge (8nC typical). ; Max rDS(ON) = 68mΩ at VGS = -2.5V, ID = -3.8A ; RoHS Compliant ; High performance trench technology for extremely low rDS(on) | SOT23 (6-Pin) | FDC638APZ |
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FDC6301N
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1 | 25 V, 0.22 A continuous, 0.5 A Peak ; Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V ; Gate-Source Zener for ESD ruggedness. >6kV Human Body Model ; RDS(ON) = 4 Ω @ VGS= 4.5 V; RDS(ON) = 5 Ω @ VGS= 2.7 V | SOT23 (6-Pin) | FDC6301N |
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FDC6333C
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1 | High performance trench technology for extremely low RDS(ON); Q2 –2.0 A, 30V.; Low gate charge ; Q1 2.5 A, 30V; RDS(on) = 150 mΩ @ VGS = 4.5 V; RDS(on) = 95 mΩ@ VGS = 10 V; RDS(on) = 220 mΩ @ VGS = -4.5 V; SuperSOT –6 package: small footprint (72% smaller thanSO-8); low profile (1mm thick).; RDS(on) = 150 mΩ@ VGS = -10 V | SOT23 (6-Pin) | FDC6333C |
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FDC6312P
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1 | SuperSOT™-6 package: small footprint (72%smaller than standard SO-8); low profile (1mm thick); High performance trench technology for extremely low RDS(ON); RDS(ON) = 155 mΩ @ VGS = –2.5 V; RDS(ON) = 115 mΩ @ VGS = –4.5 V; –2.3 A, –20 V. ; RDS(ON) = 225 mΩ @ VGS = –1.8 V | SOT23 (6-Pin) | FDC6312P |
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FDC6329L
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1 | Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human Body Model) ; VDROP=0.2V @ VIN=5V, IL=2.8A. R(ON) = 0.07Ω VDROP=0.2V @ VIN=2.5V, IL=1.9A. R(ON) = 0.105Ω ; High performance PowerTrench™ technology for extremely for superior thermal and electrical capabilities | SOT23 (6-Pin) | FDC6329L |
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FDC6310P
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1 | High performance trench technology for extremelylow RDS(ON) ; SuperSOT™ -6 package: small footprint 72%smaller than standard SO-8; low profile (1mm thick) ; -2.2 A, -20 V ; Low gate charge ; Fast switching speed ; RDS(on) = 125m Ω @ VGS = -4.5 V ; RDS(on) = 190m Ω @ VGS = -2.5 V | SOT23 (6-Pin) | FDC6310P |
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FDC6306P
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1 | SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick) ; -1.9 A, -20 V ; High performance trench technology for extremely low RDS(ON) ; Fast switching speed ; RDS(on) = 0.170 Ω @ VGS = -4.5 V ; RDS(on) = 0.250 Ω @ VGS = -2.5 V ; Low gate charge (2.3nC typical) | SOT23 (6-Pin) | FDC6306P |
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FDC638P
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1 | RDS(ON) = 48 mΩ @ VGS = –4.5 V RDS(ON) = 65 mΩ @ VGS = –2.5 V; –4.5 A, –20 V.; Low gate charge (10 nC typical); High performance trench technology for extremely low RDS(ON); SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick) | SOT23 (6-Pin) | FDC638P |
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FDC6324L
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1 | VDROP=0.2V @ VIN=12V, IL=1A, VON/OFF=1.5 to 8V VDROP=0.3V @ VIN=5V, IL=1A, VON/OFF=1.5 to 8V ; VON/OFF Zener protection for ESD ruggedness >6KV Human Body Model ; High density cell design for extremely low on-resistance ; SuperSOT™-6 package design using copper lead frame for superior thermal and electrical capabilities | SOT23 (6-Pin) | FDC6324L |
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FDC6305N
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1 | RDS(on) = 0.12Ω @ VGS = 2.5V ; Fast switching speed ; SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick) ; High performance trench technology for extremelylow RDS(ON) ; RDS(on) = 0.08Ω @ VGS = 4.5V ; Low gate charge (3.5nC typical) ; 2.7 A, 20 V | SOT23 (6-Pin) | FDC6305N |
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FDC6318P
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1 | High performance trench technology for extremely low RDS(ON); SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick); -2.5A, -12V RDS(ON) = 90mΩ @ VGS = -4.5V RDS(ON) = 125mΩ @ VGS = -2.5V RDS(ON) = 200mΩ @ VGS = -1.8V | SOT23 (6-Pin) | FDC6318P |
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FDC6321C
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1 | N-Ch 25 V, 0.68 A, RDS(ON) = 0.45 Ω @ VGS= 4.5 V; Replace multiple dual NPN & PNP digital transistors.; Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) < 1.0V.; P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 Ω @ VGS= -4.5 V.; Gate-Source Zener for ESD ruggedness. >6kV Human Body Model | Small Outline Packages | FDC6321C |
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FDC637AN
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1 | Low gate charge (10.5nC typical). ; High performance trench technology for extremelylow RDS(ON) . ; 6.2 A, 20 V RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(on) = 0.032 Ω @ VGS = 2.5 V ; SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick). ; Fast switching speed. | SOT23 (6-Pin) | FDC637AN |
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FDC637BNZ
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1 | N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ | SOT23 (6-Pin) | FDC637BNZ |
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FDC6330L
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1 | High performance PowerTrench™ technology for extremely low on-resistance. ; VDROP = 0.2V @ VIN = 12V, IL=2.5 A. R(ON)= 0.08 Ω VDROP = 0.2V @ VIN= 5V,IL= 1.6 A. R(ON)= 0.125 Ω ; Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6kV Human Body Model) ; SuperSOT™ 6 package design using copper lead frame for superior thermal and electrical capabilities. | SOT23 (6-Pin) | FDC6330L |
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FDC6303N
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1 | RDS(ON) = 0.45 Ω @ VGS= 4.5 V ; Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET ; RDS(ON) = 0.6 Ω @ VGS = 2.7 V ; Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V ; Gate-Source Zener for ESD ruggedness. >6kV Human Body Model ; 25 V, 0.68 A continuous, 2 A Peak | SOT23 (6-Pin) | FDC6303N |
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FDC6302P
onsemi
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1 | Last Shipments - Dual P-Channel Digital FET -25V, -0.46A, 1.1Ω | SOT23 (6-Pin) | FDC6302P |
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FDC6327C
onsemi
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1 | N-Channel 2.7A, 20V RDS(on) = 0.08Ω @ VGS = 4.5V RDS(on) = 0.12Ω @ VGS = 2.5V; SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).; Fast switching speed.; Low gate charge.; High performance trench technology for extremelylow RDS(ON) .; P-Channel -1.6A, -20V RDS(on) = 0.17Ω @ VGS = -4.5V RDS(on) = 0.25Ω @ VGS = -2.5V | SOT23 (6-Pin) | FDC6327C |
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FDC637AN-NB5E023A
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1 | N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ | SOT23 (6-Pin) | FDC637AN-NB5E023A |
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FDC633N
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1 | MOSFET SSOT-6 N-CH 30V | SOT23 (6-Pin) | FDC633N |
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![Part Image](["https://componentsearchengine.com/Images/9/FDC6320C.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/3/FDC637BNZ.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FDC6302P.jpg",null,null])
![Part Image](["https://componentsearchengine.com/2D/0/19232753.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/FDC633N.jpg",null,null])
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